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| IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIII I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIII I I III IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII II I II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I I III I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII III II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII . . . for use in power amplifier and switching circuits, -- excellent safe area limits. Complement to PNP 2N5194, 2N5195. (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data Preferred devices are Motorola recommended choices for future use and best overall value. Silicon NPN Power Transistors SEMICONDUCTOR TECHNICAL DATA MOTOROLA OFF CHARACTERISTICS *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) THERMAL CHARACTERISTICS *MAXIMUM RATINGS REV 7 Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Power Dissipation @ TC = 25_C Derate above 25_C Base Current Collector Current Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (1) (IC = 0.1 Adc, IB = 0) Characteristic Rating Characteristic Symbol TJ, Tstg VCEO VCB VEB PD IC IB Symbol JC 2N5191 60 60 - 65 to + 150 2N5191 2N5192 2N5191 2N5192 2N5191 2N5192 2N5191 2N5192 2N5191 2N5192 40 320 1.0 4.0 5.0 3.12 Max 2N5192 80 80 Watts mW/_C Unit Unit Adc Adc Vdc Vdc Vdc VCEO(sus) _C _C Symbol ICBO ICEO IEBO ICEX Min 60 80 -- -- -- -- -- -- -- -- -- 4 AMPERE POWER TRANSISTORS SILICON NPN 60 - 80 VOLTS 40 WATTS *Motorola Preferred Device 2N5191 2N5192* CASE 77-08 TO-225AA TYPE Order this document by 2N5191/D Max 1.0 0.1 0.1 0.1 0.1 2.0 2.0 1.0 1.0 -- -- (continued) mAdc mAdc mAdc mAdc Unit Vdc 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 2N5191 2N5192 (1) Pulse Test: Pulse Width 300 s, Duty Cycle * Indicates JEDEC Registered Data. *ELECTRICAL CHARACTERISTICS -- continued (TC = 25_C unless otherwise noted) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS 2 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Current-Gain -- Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) Base-Emitter On Voltage (1) (IC = 1.5 Adc, VCE = 2.0 Vdc) Collector-Emitter Saturation Voltage (1) (IC = 1.5 Adc, IB = 0.15 Adc) (IC = 4.0 Adc, IB = 1.0 Adc) DC Current Gain (1) (IC = 1.5 Adc, VCE = 2.0 Vdc) (IC = 4.0 Adc, VCE = 2.0 Vdc) 0.1 0.004 hFE , DC CURRENT GAIN (NORMALIZED) 0.3 1.0 0.7 0.5 10 7.0 5.0 0.2 2.0 3.0 0.4 0.8 1.2 1.6 2.0 0 0.05 0.07 0.1 IC = 10 mA 0.007 TJ = 150C TJ = 25C 0.01 25C v 0.2 0.3 Characteristic 0.02 0.5 - 55C 100 mA 0.03 0.7 v 2.0%. 1.0 Figure 2. Collector Saturation Region 0.05 Figure 1. DC Current Gain 0.1 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 2N5191 2N5192 2N5191 2N5192 Motorola Bipolar Power Transistor Device Data 1.0 A 20 VCE(sat) VBE(on) Symbol hFE fT 30 0.5 50 70 1.0 Min 2.0 25 20 10 7.0 -- -- -- 100 3.0 A Max 100 80 -- -- 1.2 0.6 1.4 -- 2.0 VCE = 2.0 V VCE = 10 V 200 300 3.0 MHz Unit Vdc Vdc -- 500 4.0 2N5191 2N5192 V, TEMPERATURE COEFFICIENTS (mV/C) 2.0 TJ = 25C 1.6 VOLTAGE (VOLTS) + 2.5 + 2.0 + 1.5 + 1.0 + 0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 V for VBE *APPLIES FOR IC/IB hFE @ VCE 2.0 V 2 TJ = - 65C to +150C + 1.2 *V for VCE(sat) 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMP) 1.0 2.0 3.0 4.0 IC, COLLECTOR CURRENT (AMP) Figure 3. "On" Voltages RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) Figure 4. Temperature Coefficients 103 IC, COLLECTOR CURRENT ( A) 102 101 100 10-1 10- 2 VCE = 30 V TJ = 150C 107 106 105 IC ICES IC = 2 x ICES 104 103 102 20 IC = 10 x ICES VCE = 30 V 100C REVERSE FORWARD 25C ICES 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6 (TYPICAL ICES VALUES OBTAINED FROM FIGURE 5) 40 60 80 100 120 140 160 10- 3 - 0.4 - 0.3 - 0.2 - 0.1 VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C) Figure 5. Collector Cut-Off Region Figure 6. Effects of Base-Emitter Resistance 300 TURN-ON PULSE APPROX +11 V Vin 0 VEB(off) APPROX +11 V Vin t2 TURN-OFF PULSE VCC Vin RC 200 CAPACITANCE (pF) RB Cjd << Ceb - 4.0 V t1 7.0 ns 100 < t2 < 500 s t3 < 15 ns DUTY CYCLE 2.0% APPROX - 9.0 V RB and RC varied to obtain desired current levels TJ = + 25C SCOPE t1 100 Ceb 70 50 Ccb t3 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Switching Time Equivalent Test Circuit Figure 8. Capacitance Motorola Bipolar Power Transistor Device Data 3 2N5191 2N5192 2.0 1.0 0.7 0.5 t, TIME ( s) 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.05 0.07 0.1 tr @ VCC = 30 V t, TIME ( s) tr @ VCC = 10 V IC/IB = 10 TJ = 25C 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.05 0.07 0.1 tf @ VCC = 30 V ts tf @ VCC = 10 V IB1 = IB2 IC/IB = 10 ts = ts - 1/8 tf TJ = 25C 0.5 0.7 1.0 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 2.0 3.0 4.0 td @ VEB(off) = 2.0 V 0.5 0.7 1.0 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 2.0 3.0 4.0 Figure 9. Turn-On Time Figure 10. Turn-Off Time 10 IC, COLLECTOR CURRENT (AMP) 5.0 TJ = 150C 2.0 1.0 0.5 SECONDARY BREAKDOWN LIMIT THERMAL LIMIT AT TC = 25C BONDING WIRE LIMIT CURVES APPLY BELOW RATED VCEO 2N5191 2N5192 2.0 5.0 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 dc 5.0 ms 100 s 1.0 ms 0.2 0.1 1.0 There are two limitations on the power handling ability of a transistor; average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 11 is based on T J(pk) = 150_C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v Figure 11. Rating and Thermal Data Active-Region Safe Operating Area 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.05 0.02 JC(max) = 3.12C/W -- 2N5190-92 JC(max) = 2.08C/W -- MJE5190-92 0.01 0.03 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 50 100 200 500 1000 Figure 12. Thermal Response 4 Motorola Bipolar Power Transistor Device Data 2N5191 2N5192 DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA tP PP PP A train of periodical power pulses can be represented by the model shown in Figure A. Using the model and the device thermal response, the normalized effective transient thermal resistance of Figure 12 was calculated for various duty cycles. To find JC(t), multiply the value obtained from Figure 12 by the steady state value JC. t1 1/f t1 tP PEAK PULSE POWER = PP DUTY CYCLE, D = t1 f - Example: The 2N5190 is dissipating 50 watts under the following conditions: t1 = 0.1 ms, tp = 0.5 ms. (D = 0.2). Using Figure 12, at a pulse width of 0.1 ms and D = 0.2, the reading of r(t1, D) is 0.27. The peak rise in function temperature is therefore: T = r(t) x PP x JC = 0.27 x 50 x 3.12 = 42.2_C Figure A Motorola Bipolar Power Transistor Device Data 5 2N5191 2N5192 PACKAGE DIMENSIONS -B- U Q F M C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 --- -A- 123 H K V G S D 2 PL 0.25 (0.010) M J R 0.25 (0.010) A M A M M B M B M STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77-08 TO-225AA TYPE ISSUE V Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *2N5191/D* 2N5191/D |
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